Congratulations! Part number 7013655P019 with NSN 5962010507806 and NIIN 010507806 is now available and ready for shipping. This part is sourced from Bae Systems Information And Electronic Systems Integration Inc with FSC 5962 Microcircuits Electronic. You can get this part from us at a competitive price. Just fill out the form to get an instant quote for 7013655P019 NSN part with the description of Microcircuit Memory.
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National Stock Numbers (NSN) are 13-digit serials assigned to items of the federal supply chain by the Defense Logistics Agency (DLA) and used by all members of the North Atlantic Trade Organization (NATO). Are you interested in learning more about part number 7013655P019 with NSN 5962010507806? Please give us a call at +1-714-705-4780 or email us at sales@rfqexperts.com.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-050-7806 Item Description: Microcircuit Memory | 5962 | 010507806 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
7013655p019 | 2 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 795 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 120 INCHES MINIMUM AND 0 195 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING657 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND WENABLE AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND WOPEN COLLECTOR AND BIPOLAR AND WBUFFERED OUTPUT AND WDECODED OUTPUT AND EXPANDABLE AND WDISABLE AND POSITIVE OUTPUTS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATOR-0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT94117-7013655 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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