Congratulations! Part number 21049355-101 with NSN 5962013584069 and NIIN 013584069 is now available and ready for shipping. This part is sourced from Bae Systems Information And Electronic Systems Integration I Dba Bae Systems Nor with FSC 5962 Microcircuits Electronic. You can get this part from us at a competitive price. Just fill out the form to get an instant quote for 21049355-101 NSN part with the description of Microcircuit Memory.
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National Stock Numbers (NSN) are 13-digit serials assigned to items of the federal supply chain by the Defense Logistics Agency (DLA) and used by all members of the North Atlantic Trade Organization (NATO). Are you interested in learning more about part number 21049355-101 with NSN 5962013584069? Please give us a call at +1-714-705-4780 or email us at sales@rfqexperts.com.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-358-4069 Item Description: Microcircuit Memory | 5962 | 013584069 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
21049355-101 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-40 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 620 INCHES MAXIMUM |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY900 GATE ERASABLE PROGRAMMABLE LOGIC DEVICE |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC20 00 INPUT PICOFARADS MAXIMUM AND 20 00 OUTPUT PICOFARADS MAXIMUM |
MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 155 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING750 0 MILLIWATTS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND ELECTROSTATIC SENSITIVE AND MONOLITHIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN38 INPUT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM DELAY |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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