The NSN 5962-01-372-6628 part numbers such as 1372PD1124, P4C147L-15DMB manufactured by Bae Systems Information And Electronic Systems Integration I, Performance Semiconductor Corp are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-01-372-6628. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-01-372-6628 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013726628 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration I, Performance Semiconductor Corp |
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1372PD1124 | 5962-01-372-6628 | microcircuit memory | Avl | RFQ |
| P4C147L-15DMB | 5962-01-372-6628 | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 020 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYRAMS SCRAMS |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS NOMINAL AND 7 00 OUTPUT PICOFARADS NOMINAL |
| MEMORY | CBBL | FEATURES PROVIDEDHIGH SPEED AND STATIC OPERATION AND HIGH PERFORMANCE AND WENABLE AND HIGH IMPEDANCE AND WDISABLE AND HERMETICALLY SEALED |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAQ | BODY LENGTH0 860 INCHES MINIMUM AND 0 960 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC15 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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