The NSN 5962-01-372-1262 part numbers such as 15-1326285-1, 15-1326285-1, 5962 8866203NA, NH15-1326285-1 manufactured by General Dynamics Corporation, Gte Government Systems Corp, Cypress Semiconductor Inc, Dla Land And Maritime are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-01-372-1262. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-01-372-1262 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013721262 |
| NCB Code: USA (01) |
| Manufacturers: General Dynamics Corporation, Gte Government Systems Corp, Cypress Semiconductor Inc, Dla Land And Maritime |
| General Dynamics Corporation | Gte Government Systems Corp | Cypress Semiconductor Inc |
| Dla Land And Maritime |
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 15-1326285-1 | 5962-01-372-1262 | microcircuit memory | Avl | RFQ |
| 15-1326285-1 | 5962-01-372-1262 | microcircuit memory | Avl | RFQ |
| 5962 8866203NA | 5962-01-372-1262 | microcircuit memory | Avl | RFQ |
| NH15-1326285-1 | 5962-01-372-1262 | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | HAC/RMPE REAC E/I FSCM 11293 |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,SRAM,32K X 8(CY7C197) |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 6.0 VOLTS MAXIMUM INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| CZZZ | MEMORY CAPACITY | 128KX8 |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-5962-8866203UA GOVERNMENT STANDARD |
| ZZZX | DEPARTURE FROM CITED DESIGNATOR | MODIFIED FOR NUCLEAR HARDNESS IMPACT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-11 MIL-M-38510 |
| CBBL | FEATURES PROVIDED | RADIATION HARDENED AND ELECTROSTATIC SENSITIVE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| FEAT | SPECIAL FEATURES | CBBL |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 11293-15-1326285-1 |
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