The NSN 5962-01-313-0662 part numbers such as 85-49419-001, MB81C78A-45CWSC, NH85-49419-001, P4C164 45CMB manufactured by Raytheon E Systems Inc, Fujitsu Microelectronics Inc, Dla Land And Maritime, Performance Semiconductor Corp are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-01-313-0662. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-01-313-0662 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013130662 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon E Systems Inc, Fujitsu Microelectronics Inc, Dla Land And Maritime, Performance Semiconductor Corp |
| Raytheon E Systems Inc | Fujitsu Microelectronics Inc | Dla Land And Maritime |
| Performance Semiconductor Corp |
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 85-49419-001 | 5962-01-313-0662 | microcircuit memory | Avl | RFQ |
| MB81C78A-45CWSC | 5962-01-313-0662 | microcircuit memory | Avl | RFQ |
| NH85-49419-001 | 5962-01-313-0662 | microcircuit memory | Avl | RFQ |
| P4C164 45CMB | 5962-01-313-0662 | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.430 INCHES MINIMUM AND 1.485 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.080 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND STATIC OPERATION AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQZP | INPUT CIRCUIT PATTERN | 25 INPUT |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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