The NSN 5962-01-271-5534 part numbers such as MT1259-12 manufactured by Micron Corporation are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-01-271-5534. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-01-271-5534 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012715534 |
| NCB Code: USA (01) |
| Manufacturers: Micron Corporation |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 750 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 250 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 130 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND LOW POWER AND MONOLITHIC |
| MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
| MEMORY | CRHL | BIT QUANTITY262144 |
| MEMORY | CSWJ | WORD QUANTITY262144 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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