The NSN 5962-01-233-8145 part numbers such as 351-1809-012, 5349-1D 883, 613 0761 002, 659-0189-002, HM1-7649-8 manufactured by Rockwell Collins Inc, Mmi Amd, Intersil Inc, Dla Land And Maritime are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-01-233-8145. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-01-233-8145 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012338145 |
| NCB Code: USA (01) |
| Manufacturers: Rockwell Collins Inc, Mmi Amd, Intersil Inc, Dla Land And Maritime |
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 351-1809-012 | 5962-01-233-8145 | microcircuit memory | Avl | RFQ |
| 5349-1D 883 | 5962-01-233-8145 | microcircuit memory | Avl | RFQ |
| 613 0761 002 | 5962-01-233-8145 | microcircuit memory | Avl | RFQ |
| 659-0189-002 | 5962-01-233-8145 | microcircuit memory | Avl | RFQ |
| HM1-7649-8 | 5962-01-233-8145 | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 016 | 5962-01-233-8145 | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.010 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.308 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.220 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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