The NSN 5962-01-199-7510 part numbers such as 2690986-1, 312342-001, 433486 77, 577 36, 5E8077 36 manufactured by Raytheon Company, Bae Systems Information And Electronic Systems Integration I, Edo Corporation, Hamilton Sundstrand Corporation, Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-01-199-7510. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-01-199-7510 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011997510 |
| NCB Code: USA (01) |
| Manufacturers: Raytheon Company, Bae Systems Information And Electronic Systems Integration I, Edo Corporation, Hamilton Sundstrand Corporation, Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems, Honeywell International Inc, Dla Land And Maritime, Seeq Technology Inc, Intel Corporation, Eldec Corporation |
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 2690986-1 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 312342-001 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 433486 77 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 577 36 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 5E8077 36 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 6011485-001 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 6404238-1 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 82025 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 8202502YA | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 8202502YB | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| 8202502YX | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| DM27128-250 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| DM27128-251B | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| MD27128-25 B | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 191 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| UM23-02 | 5962-01-199-7510 | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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