The NSN 5962-00-166-6256 part numbers such as 11011, 462793-1, C11011, C1101A1, DMS 82108B manufactured by Intel Corporation, Raytheon Company, Dla Land And Maritime are available in RFQ Experts’ inventory. An ASAP Semiconductor owned and operated website, RFQ Experts has over six billion parts in its inventory for NSN 5962-00-166-6256. ASAP is committed to streamlining the parts procurement process for our customers, making it easy for them to search through billions of parts to find exactly what they are looking for. We have dedicated account managers ready to solve procurement issues our clients face, whether it’s a need for obsolete parts, or an aircraft on ground situation. As an AS9120B, ISO 9001:2015, and FAA AC 0056B certified company, each and every part that we ship goes through numerous quality checks and inspections, to ensure that we sell only the highest-quality parts.
| Alternative NSN: 5962-00-166-6256 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 001666256 |
| NCB Code: USA (00) |
| Manufacturers: Intel Corporation, Raytheon Company, Dla Land And Maritime |
| Part No | NSN | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 11011 | 5962-00-166-6256 | microcircuit memory | Avl | RFQ |
| 462793-1 | 5962-00-166-6256 | microcircuit memory | Avl | RFQ |
| C11011 | 5962-00-166-6256 | microcircuit memory | Avl | RFQ |
| C1101A1 | 5962-00-166-6256 | microcircuit memory | Avl | RFQ |
| DMS 82108B | 5962-00-166-6256 | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+160.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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