Part detail
Semiconductor Device Diode
1N6521NSN5961-01-306-9686CAGE60211
Semiconductor Device Diode
Detailed description
1N6521 procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
Characteristics Data of NSN 5961-01-306-9686, 5961013069686
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.170 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -2.5/+2.5 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2000.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.250 INCHES MAXIMUM |