Part detail
Transistor
SD214DE-3NSN5961-01-142-7897CAGE0AEB1
Transistor
Detailed description
SD214DE-3 procurement notes
Transistor
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number SD214DE-3 with NSN 5961-01-142-7897, 5961011427897
Characteristics Data of NSN 5961-01-142-7897, 5961011427897
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0 170 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0 500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0 209 INCHES MINIMUM AND 0 230 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | LOS ANGELES CLASS SSN 688 SPRUANCE CLASS DD 963 EMORY S LAND CLASS AS AIRCRAFT HARRIER AV-8B GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE AIRCRAFT HORNET FA-18 AIRCRAFT TOMCAT F-14 INTEGRATED UNDERWATER SURVIELLANCE SYSTE |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCILJEDECCASE OUTLINE DESIGNATION | TO-72 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0 100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20 0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20 0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50 00 MICROAMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300 0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| TEST | TEST DATA DOCUMENT | 09344-PC73579 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 INSULATED WIRE LEAD |