Part detail
Semiconductor Device Diode
1N6113JANTXNSN5961-01-475-1966CAGE14099
Semiconductor Device Diode
Detailed description
1N6113JANTX procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
Characteristics Data of NSN 5961-01-475-1966, 5961014751966
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | Voltage Rating In Volts Per Characteristic | 18.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 15.2 NOMINAL WORKING PEAK REVERSE VOLTAGE |
| ADAV | Overall Diameter | 2.1 MILLIMETERS MINIMUM AND 3.6 MILLIMETERS MAXIMUM |
| AXGY | Mounting Method | TERMINAL |
| CBBL | Features Provided | HERMETICALLY SEALED CASE |
| MRC | Decoded Requirement | Clear Text Reply |
| ABHP | Overall Length | 54.3 MILLIMETERS MINIMUM AND 70.7 MILLIMETERS MAXIMUM |
| TTQY | Terminal Type And Quantity | 2 UNINSULATED WIRE LEAD |
| ABBH | Inclosure Material | METAL |
| ABJT | Terminal Length | 25.4 MILLIMETERS MINIMUM AND 33.0 MILLIMETERS MAXIMUM |
| CTMZ | Semiconductor Material | SILICON |
