Part detail
Semiconductor Device Diode
1N23ERNSN5961-00-937-8951CAGE61322
Semiconductor Device Diode
Detailed description
1N23ER procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1N23ER with NSN 5961-00-937-8951, 5961009378951
Characteristics Data of NSN 5961-00-937-8951, 5961009378951
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
| ABHP | OVERALL LENGTH | 0.840 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.180 INCHES MINIMUM AND 0.190 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.296 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 FERRULE AND 1 TAB, SOLDER LUG |