Part detail
Semiconductor Device Diode
1N4735BNSN5961-00-904-2020CAGE81350
Semiconductor Device Diode
Detailed description
1N4735B procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1N4735B with NSN 5961-00-904-2020, 5961009042020
Characteristics Data of NSN 5961-00-904-2020, 5961009042020
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |