Part detail
Semiconductor Device Diode
1SV166NSN5961-01-463-3761CAGE33297
Semiconductor Device Diode
Detailed description
1SV166 procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1SV166 with NSN 5961-01-463-3761, 5961014633761
Characteristics Data of NSN 5961-01-463-3761, 5961014633761
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQX | Current Rating Per Characteristic | 10.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK |
| AKPV | Mounting Facility Quantity | 2 |
| ABHP | Overall Length | 2.500 MILLIMETERS MAXIMUM |
| CTRD | Power Rating Per Characteristic | 250.0 MICROWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER PEAK |
| CTSG | Maximum Operating Temp Per Measurement Point | -55.0 DEG CELSIUS CASE AND 125.0 DEG CELSIUS CASE |
| ABKW | Overall Height | 1.700 MILLIMETERS MAXIMUM |
| MRC | Decoded Requirement | Clear Text Reply |
| AYQS | Terminal Circle Diameter | 0.004 MILLIMETERS MAXIMUM |
| ABBH | Inclosure Material | GLASS |
| ABJT | Terminal Length | 0.160 MILLIMETERS MAXIMUM |
| ABMK | Overall Width | 1.700 MILLIMETERS MAXIMUM |
| TTQY | Terminal Type And Quantity | 2 BRACKET |
| CTMZ | Semiconductor Material | SILICON |
| AGAV | End Item Identification | 6625-01-425-2551E/IFSCM33297 |
| CTQN | Voltage Rating In Volts Per Characteristic | 30.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| AXGY | Mounting Method | COMPRESSION |