Part detail
Semiconductor Device Diode
1SV210NSN5961-01-463-3681CAGE33297
Semiconductor Device Diode
Detailed description
1SV210 procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1SV210 with NSN 5961-01-463-3681, 5961014633681
Characteristics Data of NSN 5961-01-463-3681, 5961014633681
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 3.700 MILLIMETERS MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.160 MILLIMETERS MAXIMUM |
| ABKW | OVERALL HEIGHT | 1.250 MILLIMETERS MAXIMUM |
| ABMK | OVERALL WIDTH | 1.700 MILLIMETERS MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297 |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| AXGY | MOUNTING METHOD | COMPRESSION |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.004 MILLIMETERS MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 28.0 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK |
| CTRD | POWER RATING PER CHARACTERISTIC | 125.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER PEAK |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND 125.0 DEG CELSIUS CASE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |