Part detail
Semiconductor Device Diode
1N26RNSN5961-00-833-6818CAGE83781
Semiconductor Device Diode
Detailed description
1N26R procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1N26R with NSN 5961-00-833-6818, 5961008336818
Characteristics Data of NSN 5961-00-833-6818, 5961008336818
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.765 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.221 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE1440 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 70.0 DEG CELSIUS AMBIENT AIR |