Part detail
Microcircuit Memory
5962-3820702BEANSN5962-01-129-6432CAGE81349
Microcircuit Memory
Detailed description
5962-3820702BEA procurement notes
Microcircuit Memory
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 5962-3820702BEA with NSN 5962-01-129-6432, 5962011296432
Characteristics Data of NSN 5962-01-129-6432, 5962011296432
| MRC | Criteria | Characteristic |
|---|---|---|
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM" |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | PROM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT" |
| ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM" |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT" |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | PROM" |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)." |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT" |