Part detail
Semiconductor Device Diode
1N5620NSN5961-00-333-9966CAGE81349
Semiconductor Device Diode
Detailed description
1N5620 procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 1N5620 with NSN 5961-00-333-9966, 5961003339966
Characteristics Data of NSN 5961-00-333-9966, 5961003339966
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | UNABLE TO DECODE | UNABLE TO DECODE |
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | MRAP-RG-33 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | UNABLE TO DECODE | UNABLE TO DECODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 MAXIMUM REVERSE VOLTAGE,INSTANTANEOUS AND 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |