Part detail
Semiconductor Device Diode
11-00100NSN5961-01-029-7203CAGE06VJ6
Semiconductor Device Diode
Detailed description
11-00100 procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 11-00100 with NSN 5961-01-029-7203, 5961010297203
Characteristics Data of NSN 5961-01-029-7203, 5961010297203
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | GERMANIUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 80.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PEAK |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |