Part detail
Transistor
2N3260NSN5961-00-018-1274CAGE80131
Transistor
Detailed description
2N3260 procurement notes
Transistor
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 2N3260 with NSN 5961-00-018-1274, 5961000181274
Characteristics Data of NSN 5961-00-018-1274, 5961000181274
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABKW | OVERALL HEIGHT | 0.541 INCHES NOMINAL |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CQJX | NOMINAL THREAD SIZE | 0.250 INCHES |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 30.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ABHP | OVERALL LENGTH | 0.541 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.875 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 10.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 WIRE HOOK AND 2 TAB, SOLDER LUG |