Part detail
Semiconductor Device Diode
2030111NSN5961-00-286-5415CAGE62169
Semiconductor Device Diode
Detailed description
2030111 procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 2030111 with NSN 5961-00-286-5415, 5961002865415
Characteristics Data of NSN 5961-00-286-5415, 5961002865415
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.375 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.125 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5699 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |