Part detail
Semiconductor Device Diode
05-1N5812-XNSN5961-01-102-6561CAGE94987
Semiconductor Device Diode
Detailed description
05-1N5812-X procurement notes
Semiconductor Device Diode
Specifications
Reference data
Multi-line procurement
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Compliance
- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 05-1N5812-X with NSN 5961-01-102-6561, 5961011026561
Characteristics Data of NSN 5961-01-102-6561, 5961011026561
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-4 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | CATHODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
| CQJX | NOMINAL THREAD SIZE | 0.190 INCHES |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 400.00 AMPERES FORWARD CURRENT, AVERAGE PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/478 GOVERNMENT SPECIFICATION |