General Characteristics Item Description: Consists of a gallium arsenide light emitting diode optically coupled to a silicon npn photo transistor, six lead dual-in-line pkg, encapsulated in a nonconductive plastic case, 0.360 in. lg, 0.250 in. W, 0.200 in. H, collector-base voltage 30V, emitter-collector voltage 4V, emitter-base voltage 4V, input-diode reverse voltage 3V III Storage Temp Range: -55.0 to 150.0 deg celsius
General Characteristics Item Description: Consists of a gallium arsenide light emitting diode optically coupled to a silicon npn photo transistor, six lead dual-in-line pkg, encapsulated in a nonconductive plastic case, 0.360 in. lg, 0.250 in. W, 0.200 in. H, collector-base voltage 30V, emitter-collector voltage 4V, emitter-base voltage 4V, input-diode reverse voltage 3V III Storage Temp Range: -55.0 to 150.0 deg celsius
175-0002 procurement notes
General Characteristics Item Description: Consists of a gallium arsenide light emitting diode optically coupled to a silicon npn photo transistor, six lead dual-in-line pkg, encapsulated in a nonconductive plastic case, 0.360 in. lg, 0.250 in. W, 0.200 in. H, collector-base voltage 30V, emitter-collector voltage 4V, emitter-base voltage 4V, input-diode reverse voltage 3V III Storage Temp Range: -55.0 to 150.0 deg celsius
Reference data
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- AS9120:2025· Aerospace QMS
- ISO 9001:2015· Quality Management
- FAA AC 00-56B· Voluntary Industry Distributor Accreditation
- U.S. ONLY· Fulfillment
NSN Information for Part Number 175-0002 with NSN 5980-00-607-9104, 5980006079104
Characteristics Data of NSN 5980-00-607-9104, 5980006079104
| MRC | Criteria | Characteristic |
|---|---|---|
| AFJQ | STORAGE TEMP RANGE | -55.0/+150.0 DEG CELSIUS |
| TEXT | GENERAL CHARACTERISTICS ITEM DESCRIPTION | CONSISTS OF A GALLIUM ARSENIDE LIGHT EMITTING DIODE OPTICALLY COUPLED TO A SILICON NPN PHOTO TRANSISTOR,SIX LEAD DUAL-IN-LINE PKG,ENCAPSULATED IN A NONCONDUCTIVE PLASTIC CASE,0.360 IN. LG,0.250 IN. W,0.200 IN. H,COLLECTOR-BASE VOLTAGE 30V,E |