Transistors Mosfets Fets Igbts - Electrical Connector Parts Listing

On Semiconductor, St Micro Electronics, Toshiba Electronic Components are just a few of the manufacturers RFQ Experts sources Transistors Mosfets Fets Igbts electrical connector parts from. We organize our inventory by part numbers, such as 12-v-2-0-a-low-vce-sat-pnp-transistor-sc88, 30-v-0-7-a-low-vce-sat-npn-transistor-sc74, 30-v-1-0-a-low-vce-sat-npn-transistor-sot23, 30-v-1-0-a-low-vce-sat-pnp-transistor-sot23, n-channel-100v-0-07-ohm-22a-to-220-stripfetö-power-mosfet. Our dedicated account managers are ready and waiting to respond to your Instant RFQ, and can work with you hand-in-hand throughout the purchasing process, from the initial bid to the final sale. Don’t delay; submit an Instant RFQ now for Transistors Mosfets Fets Igbts parts, and enjoy the future of purchasing.

Manufacturer's List for Transistors Mosfets Fets Igbts

On Semiconductor St Micro Electronics Toshiba Electronic Components

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Part No.	Description	Manufacturer	RFQ
12-v-2-0-a-low-vce-sat-pnp-transistor-sc88	ON SemiconductorÆs e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUÆs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.	On Semiconductor	RFQ
30-v-0-7-a-low-vce-sat-npn-transistor-sc74	ON SemiconductorÆs e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUÆs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.	On Semiconductor	RFQ
30-v-1-0-a-low-vce-sat-npn-transistor-sot23	ON SemiconductorÆs e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUÆs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.	On Semiconductor	RFQ
30-v-1-0-a-low-vce-sat-pnp-transistor-sot23	ON SemiconductorÆs e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUÆs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.	On Semiconductor	RFQ
n-channel-100v-0-07-ohm-22a-to-220-stripfetö-power-mosfet	This Power MOSFET is the latest development of STMicroelectronics unique Single Feature SizeÖ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.	St Micro Electronics	RFQ
n-channel-35a-600v-to-247-low-drop-powermesh-igbt	Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÖ IGBTs, with outstanding performances.	St Micro Electronics	RFQ
n-channel-35a-600v-to-247-low-drop-powermeshö-igbt	Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÖ IGBTs, with outstanding performances.	St Micro Electronics	RFQ
n-channel-60v-0-07-ohm-16a-to-220-to-220fp-stripfet-ii-power-mosfet	This Power MOSFET is the latest development of STMicroelectronis unique Single Feature SizeÖ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.	St Micro Electronics	RFQ
n-channel-7a-600v-to-220fp-powermesh-igbt	Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH Ö IGBTs, with outstanding performances. The suffix ôSö identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS	St Micro Electronics	RFQ
tlp172	PHOTOCPLR RELAY MOSFET-OUT 4-SOP	Toshiba Electronic Components	RFQ

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